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. 2014 Dec 23;9:692. doi: 10.1186/1556-276X-9-692

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© Panja et al.; licensee Springer. 2014

This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

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Cumulative probability of formation voltage and leakage current. (a) Formation voltages and (b) leakage currents depend on the device sizes and thickness of the Al₂O₃ films for the Al/Cu/Al₂O₃/TiN CBRAM devices with sizes of 8 × 8 and 0.4 × 0.4 μm². The thicknesses of Al₂O₃ film are 2, 5, and 10 nm.