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. 2014 Dec 23;9:692. doi: 10.1186/1556-276X-9-692

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© Panja et al.; licensee Springer. 2014

This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

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Thickness-dependent Al ₂ O ₃ film breakdown phenomena with Cu and Al top electrodes. (a) I-V characteristics show the breakdown voltage of the Cu/Al₂O₃/TiN and Al/Al₂O₃/TiN structures. The higher breakdown voltage of Al/Al₂O₃/TiN than that of the Cu/Al₂O₃/TiN structure is owing to oxidized Al at the Al/Al₂O₃ interface during deposition by thermal evaporator. (b) The breakdown voltage of the Al/Cu/Al₂O₃/TiN structures increases with increasing the thickness of Al₂O₃ film.