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. 2015 Jul 8;5:12014. doi: 10.1038/srep12014

Figure 5. Photodetection using the p-n homo-junction graphene FET.

Figure 5

(a) Time dependent photocurrent measurement on the sample irradiated for 30 s with 633 nm laser (4 μW); (b) Power dependence of the photocurrent with 532 nm (black curve) and 633 nm (red curve) lasers; (c) Photocurrent measured in one period of modulation with the 633 nm laser illumination; (d) Photoresponse and decay time measurements of graphene with different Fermi levels, corresponding to different irradiation times as shown in Fig. 4(b).