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. 2015 Jul 21;5:12286. doi: 10.1038/srep12286

Figure 2.

Figure 2

(a) Transfer characteristics of an n-type single SiNW FET as a pH sensor with a sweeping VLG. The SiNW FET was functionalized with APTES to apply amine (-NH2) groups to the sensor surface. The SS of the SiNW FET is 147 mV/decade. (b) VT and (c) ISINW at different pH levels; these values were extracted from Fig. 2a. VT was extracted using the constant current method at ISINW = 10−8 A, and the current response (log (ΔI/I0)) was extracted from the transfer characteristics at VLG = 0.65 V.