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. 2014 Oct 14;24(47):7478–7487. doi: 10.1002/adfm.201401464

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© 2014 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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The ferroelectric properties of BFMO on Nb:STO (Film2): a) Leakage current density vs electric field of Film2 measured at RT where the positive contact is applied to the Pt electrode. b) Amplitude and c) phase of the PFM signal as a function of bias voltage. A slight shift towards negative electric field is caused by the use of different contacts on each side (Nb:STO and Pt). d,e) PFM phase contrast scan on Film2 after -20 V writing (10 × 10 μm²), +10V rewriting (6 × 6 μm²) and –20V rewriting (2 × 2 μm²) at RT before and after 24 h, respectively.