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. 2015 Jul 16;6:7730. doi: 10.1038/ncomms8730

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(a) Simulated current density distribution of the three subcells as a function of the thicknesses of bottom two DPP:PC₆₀BM layers. (b) Contour plot of current density distribution of the entire triple-junction devices (DPP–DPP/PCDTBT) as a function of the thicknesses of bottom DPP:PC₆₀BM layers. Note that in these two simulations the top PCDTBT:PC₇₀BM layer thickness is fixed to 80 nm, corresponding to the optimized thickness in their single-junction state. (c,d) J–V characteristics of the investigated triple-junction cells and the constituent bottom series-tandem subcells and top subcell, (c) DPP–DPP/PCDTBT, (d) DPP–DPP/OPV12. The light grey dashed lines indicate the numerical addition of the bottom series-tandem subcells and the top subcell.