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. 2015 Jul 15;6:7647. doi: 10.1038/ncomms8647

Figure 2. Electrical properties of a representative stretchable TFT and statistical variation studies in the electrical properties of 36 stretchable TFTs.

Figure 2

(a) Output (ID–VD) characteristics of a typical SWCNT-AgNW TFT (L=100 μm and W=5,000 μm) with VG from 0 to −5 V in 1 V steps. (b) Transfer (ID–VG) characteristics of the same device with VD from −1.0 to −3.0 in 1.0 step. Inset, ID–VG curve at VD=−2.0 V on a logarithmic scale. (c) Transconductance at VD=−2.0 V as a function of VG. (d–g) Histograms of TFTs showing the statistical distribution of (d) mobility, (e) unit width normalized transconductance, (f) unit width normalized ION and (g) the ION/OFF.