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. 2015 Jul 15;6:7647. doi: 10.1038/ncomms8647

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(a) Typical transfer characteristics (V_D=−2.0 V) of a TFT device after specified cycles of 20% tensile strain applied along the channel length direction. The insets show log-scale characteristics. (b) Plots of I_ON and I_OFF at 0% strain during 500 cycles of continuous stretching–relaxing between 0 and 20% strains along the channel length direction. (c) Typical transfer characteristics (V_D=−2.0 V) of a device after specified cycles of 20% tensile strain applied along the channel width direction. The insets show log-scale characteristics. (d) Plots of I_ON and I_OFF at 0% strain during 500 cycles of continuous stretching–relaxing between 0 and 20% strains along the channel width direction.