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. 2015 Aug 7;5:12882. doi: 10.1038/srep12882

Figure 1. Luminescence characteristics of GeV color center in diamond formed by ion implantation.

Figure 1

(a) PL spectra from a Ge ion implanted diamond at 300 K and 10 K. The inset shows ZPL at both the temperatures. (b) Intensity mapping of the ZPL between 595 and 608 nm at room temperature. The Ge ions were implanted to give a peak concentration of 1 × 1019 cm−3. The ion implantation conditions were determined by simulating SRIM14. The measurements were done by using a micro-Raman system at 300 K and a micro-PL system at 10 K.