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. 2015 Aug 12;10:320. doi: 10.1186/s11671-015-1013-1

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© Cai and Wang. 2015

Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 3 — Flexible logic gates using CNT-TFTs. a Optical image demonstrating the flexibility of the circuits, where the sample is wrapped onto a glass tube with a diameter of 10 mm. b Inverter voltage transfer characteristics (VTC) measured with a V_DD of 3 or 5 V. Inset shows the schematic and the optical picture of the diode-loaded inverter. c Inverter VTC measured while the circuit is bent to various curvature radii. Inset shows the inverter threshold voltage and gain as a function of curvature radius. d Inverter durability under cyclic bending test, showing stable performance for up to 2000 cycles. e, f Output characteristics of diode-loaded 2-input NOR (e) and NAND (f) gates. V _DD is 5 V for both circuits. Insets are the corresponding schematic and optical micrographs. Reproduced from ref. [26]