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. 2015 Jul 30;6:7809. doi: 10.1038/ncomms8809

Figure 1. High-performance n-type transistors with Al contacts.

Figure 1

(a) Optical image of the device for four-probe measurements. Scale bar is 6 μm. (b) Ids showing n-type operation with Ion/Ioff∼105 at 300 K. The n-type 4-terminal-calculated μFE at 300 K is 275 cm2 V−1 s−1. (c) Ids showing n-type operation with Ion/Ioff>107 at 80 K. The n-type 4-terminal mobility is μFE∼630 cm2 V−1 s−1 at 80 K with no sign of saturation. (d) Comparison of 2-terminal and 4-terminal field-effect mobilities. Contact resistance is the source of this difference.