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. 2015 Jul 30;6:7809. doi: 10.1038/ncomms8809

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(a) Ambipolar BP-FET (7 nm thickness) measured at 300 and 80 K and the corresponding mobilities. (b) Thickness (t)-dependent V_T shift and ambipolar to unipolar conversion, consistent with decreased BP work function with increasing thickness. (c) Large p-type enhancement of field-effect mobility in thick flakes, while thin flakes display reduced and type-symmetric mobilities.