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. 2015 Jul 29;6:7905. doi: 10.1038/ncomms8905

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(a) Mean dilation strain map of the RIR NC shown in Fig. 1c (scale ranges from −40% to 50% for an optimum contrast). Few stacking faults and dislocations locally distort the strain field, yet we observe a region of homogeneous strain (green) of about 15 × 30 nm, clearly larger than the 11 × 26 nm core CdSe nanorod. The z- and y- tensor axes correspond to [0002] and crystallographic axes, respectively. (b) Calculated lateral (left panel) and c-axis (right panel) strain tensor components, showing the compression of the CdSe core and dilatation of the CdS shell at the CdSe/CdS interface.

Inline graphic — (a) Mean dilation strain map of the RIR NC shown in Fig. 1c (scale ranges from −40% to 50% for an optimum contrast). Few stacking faults and dislocations locally distort the strain field, yet we observe a region of homogeneous strain (green) of about 15 × 30 nm, clearly larger than the 11 × 26 nm core CdSe nanorod. The z- and y- tensor axes correspond to [0002] and crystallographic axes, respectively. (b) Calculated lateral (left panel) and c-axis (right panel) strain tensor components, showing the compression of the CdSe core and dilatation of the CdS shell at the CdSe/CdS interface.