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. 2015 Aug 20;11(8):e1004165. doi: 10.1371/journal.pcbi.1004165

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© 2015 Harrison et al

This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are properly credited.

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Fig 2 — The dynamic I − V curve and associated refractory Exponential Integrate-and-Fire (rEIF) model fits to (i) layer-2/3, (ii) layer-4, (iii) slender-tufted layer-5 and (iv) thick-tufted layer-5 pyramidal-cell voltage timecourses. For each population the first panel A shows representitive empirical steady-state forcing terms (black; proportional to minus the dynamic I-V curve divided by capacitance) with the EIF form (colour; Eq (2)) providing a good fit for all populations. B compares the accuracy of the resulting rEIF model (coloured) to an experimental voltage trace (black). The histograms show performance measures for the voltage-timecourse fits: the spike-coincidence ratio C and the root-mean-squared difference in voltage D between repeated experimental traces (upper histogram), and experiment and model traces (lower histogram).