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. 2015 Aug 20;11(8):e1004165. doi: 10.1371/journal.pcbi.1004165

Table 1. Table of parameters measured in this study, separated into (from top to bottom) subthreshold, firing, action potential shape, and post-spike groups.

Parameter Description
C Membrane capacitance (pF)
R in Input Resistance (MΩ)
G in Input conductance (nS)
τ Membrane time constant (ms)
E Membrane equilibrium potential (mV)
S Sag percentage from hyperpolarising current

V TE Potential between threshold and rest (mV)
V T Spike-onset threshold (mV)
I spike Spike initiation current (pA)

ΔT Spike sharpness (mV)
A amp Action potential amplitude (mV)
A dur Action potential duration (ms)
A rise Action potential rate of rise (mV/ms)

g 1 Post-spike jump in conductance (nS)
τ g Conductance decay time constant (ms)
V T1 Post-spike jump in spike threshold (mV)
τ T Spike threshold decay time constant (ms)
E jump Post-Spike jump in E (mV)
E sag Post-spike sag in E (mV)
t sag Post-spike time of E sag (ms)
t 0 Post-spike time at which E crosses baseline (ms)