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. 2015 Aug 24;5:13288. doi: 10.1038/srep13288

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Transfer characteristics (I_D − V_G) of FETs (V_D = −80 V) fabricated using P3HT thin films that had been spin-cast for various spinning times, wherein the P3HT thin films were spin-coated using 2 vol% solvent additives: (a) 1,2-dichlorobenzene (DCB) or (b) acetonitrile (ACN).