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. 2015 Aug 24;5:13288. doi: 10.1038/srep13288

Figure 3. I-V characteristics of polythiophene thin films adopting a transistor configuration.

Figure 3

(a) Output curves (ID − VD) of the FETs (VG steps = 0, −20, −40, −60, and −80 V) fabricated using P3HT thin films that had been spin-cast for various spinning times.