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. 2015 Aug 24;5:13288. doi: 10.1038/srep13288

Figure 4. Detailed electrical characteristics and summary of device performance.

Figure 4

(a) Transfer characteristics (ID − VG) of the FETs (VD = −80 V) fabricated using P3HT thin films that had been spin-cast for various spinning times. (b) Field-effect mobilities (left axis) and on-off ratios (right axis) obtained from the P3HT FETs as a function of the spinning time.