Table 1. Crystallographic information of polythiophene thin films.
| Crystallographic parameters | 3sa | 5s | 10s | 30s | 60s | |
|---|---|---|---|---|---|---|
| lamella stack (out-of-plane) | q (Å−1) | 0.39552 | 0.39896 | 0.39708 | 0.3972 | 0.39761 |
| d-spacing (Å) | 15.9 | 15.7 | 15.8 | 15.8 | 15.8 | |
| FWHM (Å−1) | 0.04444 | 0.05006 | 0.05383 | 0.05546 | 0.05525 | |
| Correlation length (Å) | 254.6 | 226.1 | 210.2 | 204.1 | 204.8 | |
| g (%)b | 10.97 | 10.98 | 10.68 | 10.52 | 10.79 | |
| Navgdiff, c | 8.42 | 8.41 | 8.88 | 9.15 | 8.70 | |
| π - π stack (in-plane) | q (Å−1) | 1.63777 | 1.64014 | 1.64019 | 1.63916 | 1.64052 |
| d-spacing (Å) | 3.8 | 3.8 | 3.8 | 3.8 | 3.8 | |
| FWHM (Å−1) | 0.09501 | 0.08971 | 0.0896 | 0.09272 | 0.09334 | |
| Correlation length (Å) | 120.3 | 127.4 | 127.6 | 123.3 | 122.5 | |
P3HT thin films had been cast for various spinning times. The correlation length was determined from the full width at half maximum (FWHM) value of the X-ray diffraction pattern using the Scherrer equation.
aSpin-coating time applied to the P3HT thin films prepared on HMDS-treated SiO2/Si substrates.
bParacrystalline distortion parameters.
cAverage number of diffraction planes.