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. 2015 Aug 27;5:13504. doi: 10.1038/srep13504

Figure 5. Highest temperature at t = 50 ns in the disturbed RRAM device as a function of reset current Ireset for F = 30 nm.

Figure 5

Case 1-Case 3 correspond to the 3 “worst cases” in Fig. 4, respectively. With the decrease of Ireset from 1.7 × 10−4 A to 1.0 × 10−7 A, temperature in the disturbed RRAM filament decreases remarkably. Using the same evaluation method in Fig. 3h, the storage state of the disturbed RRAM could stand 1.0 × 1016 consecutive program/erase cycles (endurance requirement of DRAM devices) with temperature at t = 50 ns equals to 406 K, which corresponds to Ireset = 1.2 × 10−5 A, Ireset = 1.2 × 10−5 A and Ireset = 4.7 × 10−6 A (reasonable expectations of unipolar RRAM devices45,46) for the 3 “worst cases”, respectively.