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. 2015 Aug 27;5:13504. doi: 10.1038/srep13504

Table 1. Parameters used in the simulation.

Parameter Value Parameter Value Parameter Value
rcf26,30 8 nm rdiode 40 nm hline26 30 nm
hcf26 80 nm hdiode26 50 nm wline 80 nm
Inline graphic47 22 W/(mK) Inline graphic48 11.7 W/(mK) cline47 445 J/(kgK)
ccf47 445 J/(kgK) cdiode49 710 J/(kgK) ρline47 8.9 × 103 kg/m3
Inline graphic26,30 1.23 × 105 S/m Inline graphic26 3.07 × 103 S/m & 5.0 × 10−2 S/m Inline graphic26 1.23 × 105 S/m
αcf36 0.0014 ρdiode47 4.17 × 103 kg/m3 V26 1.2 V
ρcf47 8.9 × 103 kg/m3 Inline graphic47 22 W/(mK) cim47 286 J/(kgK)
ρim47 9.68 × 103 kg/m3 Inline graphic26 7 × 10−7 S/m Inline graphic50 0.5 W/(mK)

r is radius, h is thickness, kth is thermal conductivity, c is heat capacity, σ0 is the reference electric conductivity and w is width. The subscripts cf, diode, line and im denote CF (conductive filament), diode, WL/BL component and insulating material between 1D1R cells, respectively. V is reset voltage, and Inline graphic list two values which correspond to the on-state value and off-state value of the diode device.