Figure 1. Damage recovery in SiC under 21 MeV Ni⁺ ion irradiations.

The initial damage states of (a) 0.72 and (b) 1.0 were produced by 900 keV Si⁺ with a fluence of 6.3 and 12 ions per nm², respectively. Reduction of relative disorder is clearly evident with the increase of Ni fluence from 0.2 to 10 ions per nm². The combined statistical and measurement uncertainty is represented by the scattered data points from the fitted lines.