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. 2015 Sep 8;5:13753. doi: 10.1038/srep13753

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(a) Simplified cross-sectional view of the memristive tunnel junctions. Here, trap states within the Nb_xO_y are assumed. The filling and emptying of traps by injected electrons varies the amount of charge in the Nb_xO_y layer and therefore the resistance. (b) An alternative model to (a). Under forward bias voltages V_bias oxygen ions (orange circles) can move inside the Nb_xO_y layer, where their diffusion region is confined by the Al₂O₃ layer and the Nb_xO_y/Au interface. Both, the model in (a) as well as the model in (b) describe the memristive I–V characteristics.