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. 2015 Sep 8;5:13753. doi: 10.1038/srep13753

Figure 2. Resistive switching characteristics of the memristive double barrier device.

Figure 2

(a) Absolute current density |J| as function of the applied bias voltage. (b) The area-resistance product vs. junction-area curve of the double barrier device measured at 0.5 V indicates a homogeneous area dependent charge transport. The error bars are obtained from 5 cells of each area. Junction areas were confirmed with optical microscopy.