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. 2015 Sep 8;5:13785. doi: 10.1038/srep13785

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(a) the Semi-log I-V curves of CNT between TaO_y and Sc electrode; (b) the typical bipolar resistive switching; (c) the retention measurement at 85 °C with 1 V read voltage. And electrical performance of device with semiconducting CNT BE: (a) the Semi-log I-V curves of CNT between TaO_y and Sc electrode, with the band-gap structure shown in the inset image; (b) the typical bipolar resistive switching with a rectification ratio more than 10³; (c) the retention measurement at 85 °C with 5 V read voltage.