Table 1.

ICP-QQQ operating conditions

Plasma flow rate (L/min)	15	Cell focus (V)	0
RF Power	1550	Cell entrance (V)	−50
sampler depth (mm)	8	Cell exit (V)	−60
carrier gas flow (L/min)	0.95	Deflect (V)	3
peri pump (rps)	0.4	Plate bias (V)	−60
S/C temp (C)	2	Q1 bias (V)	0
dilution gas (L/min)	0.1	Q1prefilter bias (V)	−10
Extract 1 (V)	0	Q1 postfilter bias (V)	−10
Extract 2 (V)	−180	Oxygen flow rate (%)	30
Omega Bias (V)	−100	Energy Discrimination (V)	−7
Omega Lens (V)	5	OctP bias (V)	−5
Q1 Entrance (V)	−6	Q1 m/z	75
Q1 Exit (V)	0	Q2 m/z	91
Wait time offset (msec)	2	Dwell time (msec)	200