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. 2015 Oct 1;5:14656. doi: 10.1038/srep14656

Figure 2. Measurement of leakage current through the fabricated membranes.

Figure 2

(a) Setup for the measurement of leakage current through the membranes. (b) Dependence of the leakage current on the thickness of the deposited Si3N4 film at 0.1 V. Green symbols represent the leakage current through membranes fabricated using the SiO2 sacrificial layer process (55 different membranes were measured). Red symbols represent the leakage current through membranes fabricated using the poly-Si sacrificial layer process (25 different membranes were measured).