| G1 |
37% gel phosphoric acid etching for one minute
(FGM, SC, Brazil), followed by water rinsing for another minute and air
drying procedure. Silane application for one minute (Dentsply,
Petrópolis, RJ, Brazil). |
| G2 |
37% liquid phosphoric acid etching for one
minute (Reliance, Itasca, IL, USA), removal of excess acid with gentle
air drying, followed by silane application for another minute (Dentsply,
Petrópolis, RJ, Brazil). Surface was thoroughly washed and dried
(Swartz,18 2003). |
| G3 |
10% hydrofluoric acid etching for one minute
(FGM, Joinville, SC, Brazil), followed by thorough washing and drying of
surface. |
| G4 |
10% hydrofluoric acid etching for one minute
(FGM, Joinville, SC, Brazil), followed by washing and drying of surface
and application of silane for one minute (Dentsply, Petrópolis, RJ,
Brazil). |
