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. 2015 Sep 25;6:8407. doi: 10.1038/ncomms9407

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(a) An illustration of graphene-based RRAM in a vertical cross-point architecture. The RRAM cells are formed at the intersections of the TiN pillar electrode and the graphene plane electrode. The resistive switching HfO_x layer surrounds the TiN pillar electrode and is also in contact with the graphene plane electrode. (b) A schematic cross-section of the graphene-based RRAM. (c) High-resolution TEM image (details in Methods section) of the two-stack GS-RRAM structure. The RRAM memory elements are highlighted in red. Scale bar, 40 nm. (d,e) First and second layer of GS-RRAM with graphene on top of the Al₂O₃ layer. Scale bars, 5 nm. (f,g) TEM image of the two-stack Pt-based RRAM from previous work14,15. Scale bars, 40 nm (f) and 5 nm (g).