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. 2015 Oct 12;5:15123. doi: 10.1038/srep15123

Figure 2.

Figure 2

(a) Schematic representation of the ZnO NW device; inset: SEM image of a single–ZnO NW device. (The figure was drawn by Shuen-Jium You) (b) Id–Vd curves measured at various gate voltages. (c) Id–Vg curve recorded at a value of Vd of 0.5 V.