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. 2015 Oct 13;5:15097. doi: 10.1038/srep15097

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(a) Schematic structure of a sample Hall-bar. (b) Optical micrograph of a sample Hall-bar structure. Red square indicates the scanning area of 80 μm × 80 μm for (c). Mappings of magnetic field distribution induced by current in a GaAs/Al_xGa_1−xAs modulation-doped single heterojunction sample at T = 4 K for current (c) and (d) 2.8 μA at the applied magnetic field by a superconducting magnet of 0.0 mT using a nano-SQUID probe after mechanical polishing of the tip of the probe. The height of the SQUID probe from the sample surface was 1.5 μm.

Inline graphic — (a) Schematic structure of a sample Hall-bar. (b) Optical micrograph of a sample Hall-bar structure. Red square indicates the scanning area of 80 μm × 80 μm for (c). Mappings of magnetic field distribution induced by current in a GaAs/Al_xGa_1−xAs modulation-doped single heterojunction sample at T = 4 K for current (c) and (d) 2.8 μA at the applied magnetic field by a superconducting magnet of 0.0 mT using a nano-SQUID probe after mechanical polishing of the tip of the probe. The height of the SQUID probe from the sample surface was 1.5 μm.