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. 2015 Oct 14;5:15024. doi: 10.1038/srep15024

Table 1. Definitions and nominal values of parameters used in the model.

Parameter Equation Nominal value
Pressure gradient between arterial and venous PVS Inline graphic 226 Pa
Capillary basement membrane resistance for half the length of one AU Inline graphic Inline graphic
ECS resistance for half the length of one AU Inline graphic Inline graphic
IEG resistance for the thickness of an endfoot Inline graphic Inline graphic
Resistance of intracellular pathway in the astrocyte processes for half the length of one AU Inline graphic Inline graphic
Endfoot membrane resistance Inline graphic Inline graphic
Resistance of the plasma membrane in half of the astrocyte unit Inline graphic Inline graphic
Gap junction resistance Inline graphic Inline graphic

Derivations are documented in Supplementary Information S1. Inline graphic Total flow resistance in the ISF space between arterial and venous PVS; Inline graphic Nominal Interstitial fluid flow rate; Inline graphic Resistance of a single ECS pathway for half the length of one AU; DAU Diameter of the astrocyte unit; ncapillary Average number of capillaries in one AU; KBM hydraulic permeability of the capillary basement membrane; ABM the cross section area of basement membrane; nECS Number of parallel ECS pathways in one AU; μ dynamic viscosity of ISF; TEF endfoot thickness; LEF endfoot length; HIEG thickness of IEG; τPR Tortuosity of the astrocyte processes; DPR Diameter of astrocyte process; CAQP4 Water conductivity of a single AQP4; SEF and SPM Endfoot and plasma membrane surface areas, respectively; Inline graphic and Inline graphic AQP4 densities over the endfoot and plasma membrane, respectively; Inline graphic Water resistance of single gap junction channel; dGJ density of gap junction channels; SGJ surface area of the contact region between neighbouring astrocytes.