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. 2015 Oct 19;5:15313. doi: 10.1038/srep15313

Figure 5. Photoresponsive behavior of hexagonal MoSe2 TFT.

Figure 5

(a) Comparison of transfer characteristics (Ids − Vgs) in the dark and under illumination with different optical power densities (λex = 638 nm, Pinc = 20, 40, 80, 160, 320, 640, 1280 and 2560 mW/cm2). (b) Responsivity of the device in logarithmic scale in the on (Vgs = −65 V) and off (Vgs = 20 V) regions. (c) Switching behavior (Ids − Time) of the photodetector at Vgs = 20 V. The device was switched on and off with the laser (λex = 638 nm) at an interval of 10 s (a period of 20 s). (d) One cycle of the laser pulse, showing the drain current in the off region at Vgs = 20 V on a linear-scale of (c).