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. 2015 Oct 19;6:8610. doi: 10.1038/ncomms9610

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(a) Left: HAADF-STEM image of the epitaxial SrTiO₃/Al₂O₃ interface (denoised by a nonlinear filter62); right: magnified one-dimensional averaged image better revealing the structure of the epitaxial interfaces. (b) Average resistance of SrTiO₃/YSZ heterostructure devices in the LRS (dashed line) and the HRS (solid line) as a function of time after switching for a SET current compliance of 1 mA (violet lines) and 10 mA (blue lines). The device schematic is shown in the inset. (c) Average resistance of SrTiO₃/Al₂O₃ heterostructure devices in the LRS (dashed line) and the HRS (solid line) as a function of time after switching for a SET current compliance of 10 mA (blue lines) and 30 mA (red lines). Error bars indicate the minimum and maximum values obtained for each resistance state. The device schematic is shown in the inset.