. 2015 Oct 16;15(10):26478–26566. doi: 10.3390/s151026478

Table 2.

Overview of some single-ended tuning fork (SETF) and double-ended tuning fork (DETF) resonators.

Component	Fabrication Technique	Frequency Range	Quality Factor	Reference
SETF	silicon-on-insulator wafer by a two-step process	>1.5 MHz	~2000	Gronicz et al. [137]
	Focused-ion-beam chemical vapor deposition process	~1.5–11 MHz (10 Pa)	~150–600	Ashiba et al. [127]
	Focused-ion-beam chemical vapor deposition process	~1–11 MHz (0.1 MPa)	~5–50	Ashiba et al. [127]
DETF	Episeal encapsulation process	~100–2000 kHz	~9000–17,000	Agarwal et al. [139]
	Wafer-scale HFCVD diamond deposition process	~0.5–10 MHz	<81,646	Najar et al. [140]
	Ge-blade damascene process (GBDP)	24.04 MHz	~6000	Takeuchi et al. [141]
	Silicon-on-insulator (SOI) micromachining process	47.2 kHz (in-phase)	26,000	Zhang and Lee [135]
	Silicon-on-insulator (SOI) micromachining process	49.6 kHz (anti-phase)	100,000	Zhang and Lee [135]
	Silicon on-insulator (SOI) MEMS process	~310 kHz	21,221	Thiruvenkatanathan et al. [142]