Table 1. Preparation conditions for different mesoporous silicon prototypes synthesized by the electrochemical method under special cyclic regimes with etch-stop (zero current) applied after each anodizing interval.

Three different prototypes (A–C) were prepared and tested in this study, differing in silicon waver resistivity, current densities, etch-stop times, and thermal oxidation temperatures.

Prototype	Si wafer resistivity (Ω cm)	Current density (mA/cm2)/ anodizing time (s)	Etch stop time (s)	Oxidation temperature (°C)
A	0.01–0.02	40/5	5	500
B	0.01–0.02	40/10	2	650
C	10–20	60/5	2	550