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. 2015 Nov 9;5:16366. doi: 10.1038/srep16366

Figure 5. Electrical characteristics of planar transistor devices.

Figure 5

(ac) IDVD and (df) IDVG characteristics of the planar transistors based on graphene/Ag hybrid fiber electrodes with Rdraw = 0.6 or, 1.2 and reduced graphene oxide fiber electrodes, respectively. The inset shows the optical image of a planar transistor device with a channel length of 300 μm and a channel width of 2 mm.