Table 1. Hirshfeld charges distribution before and after Si adsorption.
Atoms |
Si adsorption on G |
Si adsorption on SG |
|||
---|---|---|---|---|---|
G | G–Si | SG | SG–Si(A) | SG–Si(B) | |
C1 | −0.001 | −0.004 | 0.010 | −0.006 | −0.004 |
C2 | −0.001 | −0.028 | 0.003 | −0.022 | −0.113 |
C3 | −0.001 | −0.029 | 0.004 | −0.013 | −0.100 |
C4 (or Si4) | 0.120 | −0.016 | −0.001 | −0.019 | |
S5 | 0.093 | 0.214 | 0.206 | ||
C6 | −0.016 | −0.035 | −0.024 | ||
C7 | −0.003 | −0.070 | −0.013 | ||
C8 | −0.009 | −0.028 | −0.006 | ||
Si9 | 0.190 | 0.145 |
The charge was calculated for the indicated atoms on graphene (G) and sulfur-doped graphene (SG), atoms labelling are indicated in Supplementary Figs 9 and 10.