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. 2015 Oct 26;6:8597. doi: 10.1038/ncomms9597

Table 1. Hirshfeld charges distribution before and after Si adsorption.

Atoms Si adsorption on G
Si adsorption on SG
  G G–Si SG SG–Si(A) SG–Si(B)
C1 −0.001 −0.004 0.010 −0.006 −0.004
C2 −0.001 −0.028 0.003 −0.022 −0.113
C3 −0.001 −0.029 0.004 −0.013 −0.100
C4 (or Si4)   0.120 −0.016 −0.001 −0.019
S5     0.093 0.214 0.206
C6     −0.016 −0.035 −0.024
C7     −0.003 −0.070 −0.013
C8     −0.009 −0.028 −0.006
Si9       0.190 0.145

The charge was calculated for the indicated atoms on graphene (G) and sulfur-doped graphene (SG), atoms labelling are indicated in Supplementary Figs 9 and 10.