Table 1. A summary of electrical characteristics of IGZO EGTFTs under various aqueous dielectric conditions.
| Semiconductor | Dielectric medium | Capacitance [μF/cm2] | μSat [cm2V−1s−1] | VTh [V] | gm,max [mS] | Ion/off, Max |
|---|---|---|---|---|---|---|
| IGZO | Water | 14.63 | 10.15 | 0.15 | 0.519 | 4.5 × 106 |
| KCl (0.1 M) | 25.52 | 9.22 | 0.14 | 0.817 | 2.2 × 107 | |
| KCl (0.5 M) | 27.87 | 8.74 | 0.15 | 0.844 | 1.2 × 107 | |
| KCl (1.0 M) | 28.35 | 7.90 | 0.17 | 0.724 | 4.8 × 107 | |
| KCl (2.0 M) | 30.12 | 10.82 | 0.16 | 1.086 | 1.4 × 107 | |
| IGZO | KCl (1.0 M) | 28.35 | 7.90 | 0.17 | 0.724 | 4.8 × 107 |
| NaCl (1.0 M) | 28.46 | 8.15 | 0.19 | 0.705 | 8.9 × 107 | |
| KBr (1.0 M) | 26.01 | 8.15 | 0.17 | 0.700 | 2.7 × 106 | |
| IGZO | PBS | 30.12 | 10.21 | 0.18 | 0.968 | 2.1 × 107 |
Field-effect mobilities were measured in a saturation regime [at VD = 0.5 V, W/L = 200 μm/ 20 μm]. All data were averaged over 10 devices.