Fig. 4. Mobility and disorder-induced charge carrier fluctuations n* of CVD-grown graphene samples.

Disorder-induced charge carrier density fluctuation n* and charge carrier mobility μ (averaged over both carrier types) for 10 Hall bar devices fabricated from graphene encapsulated in hBN, using the dry transfer technique (rectangles). The red data points correspond to samples from reused copper. Circle data points correspond to the transport data reported by Petrone et al. (6) for Hall bars on hBN (blue) and SiO₂ (green) (39). The dashed line represents the inverse relation between the two quantities plotted and is taken from (31).