Skip to main content
. 2015 Sep 14;6:8304. doi: 10.1038/ncomms9304

Figure 6. EIS analysis of the MOF's scaffold impact on the electronic properties of Ni-S.

Figure 6

(a) A plot of geometric area normalized charge transfer resistance (Rct) versus applied potential, comparing between FTO_NiS and NU-1000_Ni-S electrodes. (b) A plot of electroactive surface area normalized Rct versus applied potential, exhibiting similar Rct values for both FTO_Ni-S and NU-1000_Ni-S electrodes. (c) A plot of double-layer capacitive current versus CV scan rate. The slope of each curve is relative to the amount of electroactive surface area of the system.