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. 2015 Jul 14;5:12309. doi: 10.1038/srep12309

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Gate voltage dependence of a) λ, b) μ and c) T_gap and Tc. The values for λ are normalized to those in the overdoped region. In the underdoped region (brown background) the doping dependence of T_gap coincides with a change in λ. In the optimally doped and overdoped regions (blue background) the reduction of T_gap coincides with a lack of increase of μ with increasing carrier density, indicating the additional charge carriers do not reside in the band that is superconducting, but interfere. The error margins of λ reflect the uncertainty in the background subtraction procedure. The values for T_gap and T_c are taken from an earlier publication¹⁵.