Figure 5. Doping dependence of hot carrier multiplication (hCM).

The same plot as in Fig. 4 illustrating now the temporal evolution of the doping-dependent hCM for a fixed absorbed pump fluence of ε_abs = 0.3 μJcm⁻². The inset in (c) shows a direct comparison between theoretically predicted (solid lines) and experimentally measured time-resolved ARPES data (dashed lines) for: (i) n-doped graphene (E_F = 380 meV, ε_abs = 0.5 μJcm⁻²) and (ii) p-doped graphene (E_F = 240 meV, ε_abs = 1.5 μJcm⁻²). The experimental data is taken from Johannsen et al.¹⁶.