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. 2015 May 14;5:10188. doi: 10.1038/srep10188

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The XAS signals of c-GeSe₂ (dots) and a-GeSe₂ are compared in the upper-left panel, showing some differences (amplitude and near-edge) related to the different ordering of the two systems. The partial structure factors of a-GeSe₂ measured by neutron diffraction¹ are shown in the lower-left panel. The Se-Ge, Ge-Ge, and Se-Se partial distribution functions in a-GeSe₂ as measured by XAS and neutron-diffraction (ND) are shown and compared with the Ge-Se distribution in crystalline GeSe₂ (c-GeSe₂) in the right hand-side panel.

Inline graphic — The XAS signals of c-GeSe₂ (dots) and a-GeSe₂ are compared in the upper-left panel, showing some differences (amplitude and near-edge) related to the different ordering of the two systems. The partial structure factors of a-GeSe₂ measured by neutron diffraction¹ are shown in the lower-left panel. The Se-Ge, Ge-Ge, and Se-Se partial distribution functions in a-GeSe₂ as measured by XAS and neutron-diffraction (ND) are shown and compared with the Ge-Se distribution in crystalline GeSe₂ (c-GeSe₂) in the right hand-side panel.