Figure 4. Finite-difference time-domain (FDTD) simulations.

(a) Electric field distribution in 10 nm, 20 nm, 40 nm and 60 nm-diameter AuNP modified BiVO₄ for incident light of 500 nm (top) and 550 nm (bottom). (b) Model used for the simulations. (c) Field enhancement at position 2 nm underneath the interface of AuNP and BiVO₄, as a function of incident light wavelength (extracted from the simulation).