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. 2015 Nov 20;5:17080. doi: 10.1038/srep17080

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Copyright © 2015, Macmillan Publishers Limited

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(a,b) Time dependence of the normalized resistance (R/R₀, where R₀ is the pristine resistance of a non-treated VO₂ channel at 300 K with applied V_G values of 100, 0 and −100 V) (a) in humid air and (b) in dry air. The green dashed line in (a) indicates the rough saturation of R/R₀. The inset in (b) is a magnified view. (c) V_G dependence of R/R₀ after applying a V_G for 20 minutes. (d) V_G dependence of the current between the gate and source electrodes () under a humidity of 60% (blue dotted-line) and in dry air (black line). (e,f) The relative elemental ratios for hydrogen normalized by oxygen (e) in a device after applying V_G = 100 V and (f) in a pristine device. The solid and dashed green lines represent the averages of the hydrogen atom profiles and the standard deviations, respectively.

Inline graphic — (a,b) Time dependence of the normalized resistance (R/R₀, where R₀ is the pristine resistance of a non-treated VO₂ channel at 300 K with applied V_G values of 100, 0 and −100 V) (a) in humid air and (b) in dry air. The green dashed line in (a) indicates the rough saturation of R/R₀. The inset in (b) is a magnified view. (c) V_G dependence of R/R₀ after applying a V_G for 20 minutes. (d) V_G dependence of the current between the gate and source electrodes () under a humidity of 60% (blue dotted-line) and in dry air (black line). (e,f) The relative elemental ratios for hydrogen normalized by oxygen (e) in a device after applying V_G = 100 V and (f) in a pristine device. The solid and dashed green lines represent the averages of the hydrogen atom profiles and the standard deviations, respectively.