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. 2007 Aug 1;112(4):209–221. doi: 10.6028/jres.112.017

Table 3.

PDOS model input parameters for intrinsic zinc blende GaAs at 300 K. The energies of the extrema of the conduction and valence sub-bands are referenced to the bottom of the conduction sub-band at the Γ symmetry point in the Brillouin zone of the reciprocal lattice space. The mass of the free electron is m0. These GaAs data are from Refs. [11,12].

Parameter Symbol Value Units
bandgap EG = |−E| 1.424 eV
bottom of the conduction L sub-band EcL 0.29 eV
bottom of the conduction X sub-band EvX 0.48 eV
top of the degenerate valence Γ sub-band E 1.424 eV
spin-orbit splitting Eso 0.34 eV
top of the split-off (spin-orbit splitting) valence Γ sub-band EsoΓ = −EEso 1.764 eV
effective mass of conduction Γ sub-band m 0.063 m0
non-parabolicity factor (quartic term prefactor) for conduction Γ sub-band ξ 0.824
transverse L sub-band mass mtL 0.075 m0
longitudinal L sub-band mass mlL 1.9 m0
effective mass of conduction L sub-band mcL = (mlL mtL2)1/3 0.222 m0
transverse X sub-band mass mtX 0.19 m0
longitudinal X sub-band mass mlX 1.9 m0
effective mass of conduction X sub-band mcX = (mlX mtX2)1/3 0.409 m0
light hole mass of valence Γ sub-band mlh 0.082 m0
heavy hole mass of valence Γ sub-band mhh 0.51 m0
effective mass of valence Γ sub-band m 0.53 m0
splitoff band mass of the valence sub-band at Γ mso 0.15 m0
number of equivalent conduction L sub-bands NcL 4
number of equivalent conduction X sub-bands NcX 3