Table 5.
Dielectric response function input parameters for intrinsic zinc blende GaAs at 300 K. The energies of the extrema of the conduction and valence sub-bands are referenced to the bottom of the conduction sub-band at the Γ symmetry point in the Brillouin zone of the reciprocal lattice space. The mass of the free electron is m0. These GaAs data are from Ref. [14].
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| lattice constant | aL | 5.65 ×10−8 | cm |
| static dielectric constant | ε0 | 13.1 | |
| high frequency dielectric constant | ε∞ | 10.9 | |
| longitudinal optical (LO) phonon energy | ħωLO | 0.0353 | eV |
| 285 | cm−1 | ||
| transverse optical (TO) phonon energy | ħωTO | 0.0332 | eV |
| 268 | cm−1 | ||
| Energy associated with the angular collision frequency Γ | ħΓ | ~0.0124 | eV |
| due to electron-phonon and electron-dopant ion interactions | ~100 | cm−1 | |
| Faust-Henry coefficient | CFH | −0.4 | |
| effective mass for the single equivalent conduction | mC | 0.067 | m0 |
| band density of states in Eq. (6) |