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. 2015 Nov 17;6:8816. doi: 10.1038/ncomms9816

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Hall resistance R_xy of four different samples with varying top Sb₂Te₃ layer thickness investigated at fixed gate voltages and low temperature. For thinner top layer thickness of 3 QL (black curve) and 6 QL (green curve), the heterostructure is in an n-type (electron) transport regime, whereas for thicker films of 17 QL (red curve) and 28 QL (blue curve) p-type (hole) transport is dominant.