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. 2015 Dec 11;5:18082. doi: 10.1038/srep18082

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(a) Transfer curves of the IZO-based neuromorphic transistor measured by sweeping the voltage on the control gate (G₂) at V_DS = 1.5 V. An anticlockwise hysteresis loop of ~0.4 V is observed. (b) Transfer curves of the flexible neuromorphic transistor measured before, during and after bending by a cylinder with a radius of 1.0 cm. The inset is the pictures during the measurement process (Taken by Mr.Ning Liu). (c) Transfer curves of device measured before and after repeated bending cycles by sweeping the control gate (G₂) at V_DS = 0.1 V. (d) The variations in V_th and μ_FE of the flexible neuromorphic transistor with repetitive bending cycles. Error bars represent standard deviations for 5 samples.